Description
- Transistors silicon KT3126B analogue 2S3640 USSR 100 pcs
KT3126B Transistors silicon epitaxial planar structure pnp amplification with normalized noise figure. Designed for use in generators, amplifiers, converters. KT3126B: The structure of transistor: pnp Pk max - Constant collector power dissipation: 150 mW; fgr - Cutoff frequency of current transfer ratio of the transistor for the circuit with common emitter: not less than 500 MHz; Ukbo max - maximum collector-base voltage for a given reverse current collector and emitter open circuit: 20 V; Uebo max - maximum voltage of the emitter-base reverse current at a given emitter and collector open circuit 3; Ik max - maximum permissible continuous collector current of 20 mA; Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and emitter open output: less than 1 mA; h21e - Static current transfer ratio of the transistor small signal circuits for common-emitter: 60 ... 180; CK - Capacity of the collector junction: no more than 2.5 pF; Rke us - saturation resistance between the collector and emitter: no more than 120 Ohm; tc - time constant of the feedback loop at high frequency: no more than 15 ps